Infineon IPC90N04S5L3R3ATMA1: A High-Performance N-Channel MOSFET Power Transistor

In the realm of power electronics, the quest for efficiency, reliability, and compactness is relentless. The Infineon IPC90N04S5L3R3ATMA1 stands as a prime example of innovation addressing these demands. This N-Channel power MOSFET, engineered using Infineon's advanced OptiMOS 5 technology, is designed to deliver exceptional performance in a wide array of switching applications, from industrial motor drives and power supplies to automotive systems and energy management solutions.

At the heart of this component's prowess is its remarkably low on-state resistance (RDS(on)) of just 0.9 mΩ (max.) at 10 V. This ultra-low resistance is a critical factor in minimizing conduction losses, which directly translates to higher system efficiency and reduced heat generation. By operating cooler, the MOSFET enhances the reliability and longevity of the end application, allowing for more compact designs with smaller heatsinks or even passive cooling.

The device is rated for a drain-source voltage (VDS) of 40 V and a continuous drain current (ID) of 390 A at 25°C, showcasing its ability to handle high power levels with ease. This robust current handling capability makes it an ideal choice for demanding high-current switch mode power supplies (SMPS) and DC-DC converters. Furthermore, its optimized switching characteristics ensure fast turn-on and turn-off times, which are paramount for high-frequency operation. This leads to reduced switching losses, a key contributor to overall energy savings in modern power systems.

Packaged in a robust S5 (SuperSO8) housing, the IPC90N04S5L3R3ATMA1 offers an excellent power-to-size ratio. This package is renowned for its low parasitic inductance and excellent thermal performance, enabling efficient power dissipation and stable operation even under strenuous conditions. The inclusion of a low gate charge (QG) further enhances its high-frequency switching capability by reducing the driving requirements and associated losses in the gate driver circuit.

Safety and reliability are also integral to its design. The MOSFET features a high avalanche ruggedness and is qualified according to the highest automotive standards, making it suitable for mission-critical applications where failure is not an option.

ICGOOODFIND: The Infineon IPC90N04S5L3R3ATMA1 is a superior N-Channel MOSFET that sets a high benchmark for performance. Its combination of ultra-low RDS(on), high current capability, fast switching speed, and robust S5 package makes it an indispensable component for designers aiming to push the boundaries of efficiency and power density in next-generation electronic systems.

Keywords: OptiMOS 5, Low RDS(on), High Current Switching, S5 Package, Power Efficiency.