Infineon IPD031N06L3G OptiMOS 5 30V Power MOSFET for High-Efficiency Power Conversion

The relentless pursuit of higher efficiency and power density in modern electronic systems places immense demands on power switching components. Addressing this need, the Infineon IPD031N06L3G, a member of the advanced OptiMOS™ 5 30 V family, stands out as a premier solution for power designers. This Power MOSFET is engineered to deliver exceptional performance in a compact package, making it an ideal choice for a wide array of high-efficiency power conversion applications.

A cornerstone of this device's superiority is its exceptionally low figure-of-merit (FOM), characterized by an ultra-low on-state resistance (R DS(on)) and minimal gate charge (Q G). The IPD031N06L3G boasts a maximum R DS(on) of just 1.6 mΩ at 10 V, significantly reducing conduction losses. Simultaneously, its low gate charge ensures swift switching transitions, which directly minimizes switching losses. This optimal balance is critical for applications operating at high switching frequencies, as it allows for higher efficiency and enables the use of smaller passive components, thereby increasing overall power density.

The device is housed in the space-saving SuperSO8 package, which offers a footprint 30% smaller than a standard D2PAK while providing superior thermal and electrical performance. This compact form factor is invaluable for space-constrained designs such as synchronous rectification in switch-mode power supplies (SMPS), DC-DC converters in computing and telecom systems, and motor control circuits in industrial automation. Furthermore, its enhanced thermal characteristics ensure reliable operation under high-stress conditions, contributing to the long-term robustness of the end product.

Other notable features include its high avalanche ruggedness and a logic-level gate drive, which simplifies the driving circuitry and enhances design flexibility. The IPD031N06L3G is also optimized for OR-ing and hot-swap scenarios, providing robust protection in server and networking equipment.

ICGOO

The Infineon IPD031N06L3G OptiMOS™ 5 MOSFET sets a new benchmark for efficiency and power density in 30 V applications. Its industry-leading low R DS(on), fast switching capability, and superior thermal performance in a miniaturized package make it an indispensable component for engineers striving to create the next generation of high-performance, energy-efficient power systems.

Keywords:

1. High Efficiency

2. Low RDS(on)

3. Power Density

4. Synchronous Rectification

5. Thermal Performance