Infineon IPB330P10NM: High-Performance 10mΩ OptiMOS 5 Power MOSFET

In the relentless pursuit of higher efficiency and power density in modern electronics, the power MOSFET stands as a critical component. The Infineon IPB330P10NM, a member of the esteemed OptiMOS™ 5 power MOSFET family, sets a new benchmark for performance in a compact package. Engineered for demanding applications, this device combines an ultra-low RDS(on) of just 1.0 mΩ with superior switching characteristics, making it an ideal solution for a wide range of power conversion tasks.

The cornerstone of the IPB330P10NM's performance is its remarkably low on-state resistance. This ultra-low RDS(on) minimizes conduction losses, which directly translates into higher system efficiency and reduced heat generation. This is particularly crucial in high-current applications such as server and telecom power supplies, where every percentage point of efficiency gain is critical for operational cost and thermal management. Furthermore, the device's low gate charge (Qg) and excellent figure-of-merit (FOM) ensure that switching losses are also kept to an absolute minimum, enabling operation at higher frequencies without a significant efficiency penalty.

Beyond its electrical prowess, the IPB330P10NM is housed in an industry-standard PQFN 3.3x3.3 mm package. This compact form factor allows designers to shrink their PCB layouts and achieve higher power density, which is a fundamental requirement for space-constrained modern applications like blade servers, automotive systems, and high-end graphics cards. The package also features an exposed top-side cooling pad, which provides an excellent thermal path to a heatsink, effectively dissipating heat and maintaining lower junction temperatures during operation.

The robustness of this MOSFET is another key attribute. Built with Infineon's advanced silicon technology, it offers a high maximum drain current (ID) of 330 A and a strong avalanche ruggedness. This ensures reliable operation under strenuous conditions, including high inrush currents and voltage spikes, thereby enhancing the overall longevity and reliability of the end product.

ICGOO FIND Summary: The Infineon IPB330P10NM is a pinnacle of power semiconductor design, offering an unparalleled combination of ultra-low 1.0 mΩ RDS(on), high current handling, and a thermally efficient miniature package. It is engineered to push the boundaries of efficiency and power density in the most demanding power conversion systems, from data centers to automotive modules.

Keywords: Ultra-low RDS(on), OptiMOS™ 5, High Power Density, High Efficiency, PQFN Package.