Infineon BSZ097N10NS5 100V N-Channel MOSFET: Datasheet, Application Circuit, and Features

The Infineon BSZ097N10NS5 is a state-of-the-art N-Channel power MOSFET engineered using Infineon's advanced OptiMOS™ 5 technology. This 100V device is designed to deliver exceptional efficiency and robustness in a wide range of power conversion and management applications. Its key strengths lie in its extremely low on-state resistance (R DS(on)) and outstanding switching performance, making it an ideal choice for high-frequency circuits where energy loss and thermal management are critical concerns.

A primary feature of this MOSFET is its very low typical R DS(on) of just 9.7 mΩ at a gate-source voltage of 10 V. This remarkably low resistance directly translates to reduced conduction losses, allowing for higher efficiency and lower heat generation. The device is housed in a SuperSO8 package (PG-TSDSON-8), which offers an excellent thermal-to-R DS(on) ratio and a very small footprint, enabling power-dense designs for modern electronic equipment.

Key Features and Specifications:

Technology: Built on OptiMOS™ 5 superjunction technology.

Voltage Rating: 100 V drain-source voltage (V DS).

Current Rating: Continuous drain current (I D) of 40 A at 25°C.

On-Resistance: Ultra-low R DS(on) of max. 11.5 mΩ (V GS = 10 V).

Gate Charge: Low total gate charge (Q G) of 26 nC, enabling fast switching and reduced driver losses.

Package: SuperSO8 (PG-TSDSON-8) with a small 5mm x 6mm outline.

Qualification: AEC-Q101 qualified, making it suitable for automotive applications.

Typical Application Circuit:

A common application for the BSZ097N10NS5 is in a synchronous buck converter, which is the core of modern DC-DC voltage regulators found in servers, telecom infrastructure, and automotive systems. In this circuit, the BSZ097N10NS5 is typically used as the low-side (synchronous) MOSFET. Its low R DS(on) is crucial here, as it minimizes the power loss during the freewheeling phase of the switching cycle, directly boosting the overall efficiency of the power supply.

The driver IC controls the high-side and low-side MOSFETs alternately. A critical aspect of the design is the gate driving circuit. To ensure fast and efficient switching, a dedicated MOSFET driver IC is recommended to provide the necessary current to charge and discharge the gate capacitance quickly. The PCB layout must also be optimized with short and direct gate drive traces to minimize parasitic inductance, which can cause ringing and potentially damage the device.

Datasheet Importance:

For any design incorporating this component, the official Infineon datasheet is an indispensable resource. It provides all necessary information for reliable circuit design, including:

Absolute maximum ratings and derating curves.

Detailed electrical characteristics.

Switching performance graphs.

Thermal resistance values and safe operating area (SOA) diagrams.

Package dimensions and recommended PCB layout footprints.

ICGOODFIND Summary:

The Infineon BSZ097N10NS5 stands out as a high-efficiency, high-power-density solution for demanding switching applications. Its combination of ultra-low on-resistance, fast switching capability, and compact packaging makes it a superior choice for designers aiming to maximize performance in space-constrained environments like server power supplies, automotive DC-DC converters, and industrial motor controls.

Keywords:

1. OptiMOS™ 5 Technology

2. Low R DS(on)

3. Synchronous Buck Converter

4. Power Efficiency

5. SuperSO8 Package