Infineon IPB100N04S3-03: High-Performance 40 V OptiMOS Power MOSFET

The Infineon IPB100N04S3-03 is a state-of-the-art power MOSFET designed to deliver exceptional efficiency and reliability in a compact form factor. As part of Infineon’s fifth-generation OptiMOS™ family, this 40 V MOSFET is engineered to meet the demanding requirements of modern power management applications, including automotive systems, DC-DC converters, motor control, and load switching solutions.

A key highlight of the IPB100N04S3-03 is its extremely low on-state resistance (RDS(on)), which is rated at just 1.0 mΩ maximum at 10 V. This ultra-low resistance significantly reduces conduction losses, leading to higher overall system efficiency and reduced heat generation. Combined with outstanding switching performance, this MOSFET enables faster switching frequencies, which is crucial for high-frequency power supply designs where both size and performance are critical.

The device is housed in an advanced D2PAK (TO-263) package, offering superior thermal characteristics and power dissipation capabilities. This makes it suitable for high-current applications where thermal management is a priority. Additionally, the MOSFET is AEC-Q101 qualified, ensuring it meets stringent automotive reliability standards, making it an ideal choice for use in electric vehicles, battery management systems, and other automotive power electronics.

Another notable feature is its enhanced avalanche ruggedness, which provides increased durability under extreme operating conditions such as voltage spikes or inductive load switching. This robustness contributes to longer system lifespan and improved operational safety.

With a continuous drain current rating of 100 A and optimized gate charge characteristics, the IPB100N04S3-03 offers designers a balance between high current handling and efficient control. Its lead-free and RoHS-compliant construction also aligns with global environmental standards.

In summary, the Infineon IPB100N04S3-03 sets a high benchmark for power MOSFETs with its combination of low RDS(on), high switching speed, thermal efficiency, and automotive-grade reliability.

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ICGOODFIND: The Infineon IPB100N04S3-03 exemplifies next-generation power MOSFET technology with superior efficiency, thermal performance, and robustness—ideal for automotive and industrial applications.

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Keywords:

Power MOSFET

Low RDS(on)

AEC-Q101 Qualified

OptiMOS Technology

Thermal Performance